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IXFK33N50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFK33N50 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 3 page  © 2013 IXYS CORPORATION, All Rights Reserved Features International Standard Packages Avalanche Rated Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Molding epoxies meet UL 94 V-0 flammability classification Low R DS (on) HDMOS TM process Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Synchronous rectification Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS97517E(9/13) HiPerFETTM Power MOSFETs G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXFX) Tab G D S TO-264 (IXFK) S G D Tab Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 150C 500 V V DGR T J = 25 C to 150C, R GS = 1M 500 V V GSS Continuous 20 V V GSM Transient 30 V I D25 T C = 25C 33 A 35 A I DM T C = 25C, Pulse Width Limited by TJM 132 A 140 A I A T C = 25C33 A E AS T C = 25C 2.5 J dv/dt I S I DM, VDD VDSS, TJ 150C 5 V/ns P D T C = 25C 416 W T J -55 ... +150 C T JM 150 C T stg -55 ... +150 C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Weight TO-264 10 g PLUS247 6 g IXFK33N50 IXFX35N50 N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low t rr V DSS I D25 R DS(on) 33A 160m 35A 150m 500V 33N50 35N50 33N50 35N50 Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 1mA 500 V V DSS Temperature Coefficient 0.102 %/K V GS(th) V DS = VGS, ID = 4mA 2.0 4.5 V V GS(th) Temperature Coefficient -0.206 %/K I GSS V GS = 20V, VDS = 0V 200 nA I DSS V DS = 0.8 • VDSS, VGS = 0V 200 A T J = 125C 2 mA R DS(on) V GS = 10V, ID = 0.5 • IDSS, Note 1 160 m 150 m 33N50 35N50 |
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