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HM4606C Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM4606C
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  11 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM4606C Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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HM4606C
Thermal Characteristic
N-Ch
89
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
P-Ch
90
/W
℃
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
23
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=
20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±
12V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.5
0.75
1.2
V
VGS=10V, ID=5A
-
37
59
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=4A
-
3
0
4
5
mΩ
Forward Transconductance
gFS
VDS=5V,ID=5A
-
15
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
-
255
-
PF
Output Capacitance
Coss
-
45
-
PF
Reverse Transfer Capacitance
Crss
VDS=15V,VGS=0V,
F=1.0MHz
-
35
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
-
4.5
-
nS
Turn-on Rise Time
tr
-
2.5
-
nS
Turn-Off Delay Time
td(off)
-
14.5
-
nS
Turn-Off Fall Time
tf
VDD=15V, RL=3Ω
VGS=10V,RGEN=3Ω
-
3.5
-
nS
Total Gate Charge
Qg
-
5.2
-
nC
Gate-Source Charge
Qgs
-
0.85
-
nC
Gate-Drain Charge
Qgd
VDS=15V,ID=5A,
VGS=10V
-
1.3
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=5A
-
-
1.2
V
Diode Forward Current (Note 2)
IS
-
-
5
A
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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