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HM4606C Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM4606C
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  11 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM4606C Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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v1.0
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HM4606C
P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .
%
4.
Guaranteed by design, not subject to production
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-
20
-
23
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±
12V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-
0.4
-
0.7
-
1
V
VGS=-10V, ID=-4.1A
-
64
110
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-4A
-
89
140
mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-4.1A
5.5
-
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
-
700
-
PF
Output Capacitance
Coss
-
120
-
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
-
75
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
-
9
-
nS
Turn-on Rise Time
tr
-
5
-
nS
Turn-Off Delay Time
td(off)
-
28
-
nS
Turn-Off Fall Time
tf
VDD=-15V,RL=3.6Ω
VGS=-10V,RGEN=3Ω
-
13.5
-
nS
Total Gate Charge
Qg
-
14
-
nC
Gate-Source Charge
Qgs
-
3.1
-
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-4A,VGS=-10V
-
3.
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-
-
-1.2
V
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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