LT4293

3

Rev. 0

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l

denotes the specifications which apply over the full operating

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Reset Threshold

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2.6

5.6

V

Hot Swap Turn-On Voltage

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35

37

V

Hot Swap Turn-Off Voltage

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30

31

V

Hot Swap On/Off Hysteresis Window

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3

V

Supply Current

Supply Current

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2

mA

Supply Current During Classification

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0.4

0.7

0.9

mA

Supply Current During Mark Event

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0.5

2.2

mA

Detection and Classification Signature

Detection Signature Resistance

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23.7

24.4

25.2

kΩ

Resistance During Mark Event

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5.8

8.3

11

kΩ

RCLASS/RCLASS++ Operating Voltage

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1.32

1.40

1.43

V

Classification Signature Stability Time

34.8Ω from RCLASS or RCLASS++ to GND

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2

ms

Analog/Digital Interface

AUX Threshold

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6.1

6.3

6.5

V

AUX Pin Hysteresis Current

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3.2

5

7

µA

T2P Output Low

1mA Load

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0.8

V

PWRGD Output Low

1mA Load

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0.8

V

PWRGD Leakage Current

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5

µA

T2P Leakage Current

T2P = 60V

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5

µA

Hot Swap Control

HSGATE Pull-Up Current

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–27

–22

–18

µA

HSGATE Open Circuit Voltage

–10µA Load, with Respect to HSSRC

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10

18

V

HSGATE Pull-Down Current

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200

µA

Timing

T2P Frequency

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690

840

990

Hz

T2P Duty Cycle in PoE Operation (Note 5) After LTPoE++ 3-Event Classification

After 4-Event Classification

After 5-Event Classification

(RCLASS++ Has Resistor to GND)

75

50

25

%

%

%

T2P Duty Cycle in Auxiliary

Supply Operation (Note 5)

75

%

1st Classification Event Timing

Threshold

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31

87

ms

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: Signature resistance specifications do not include resistance

added by the external diode bridge which can add as much as 1.1k to the

port resistance.

Note 3: All voltages with respect to GND unless otherwise noted.

Positive currents are into pins; negative currents are out of pins unless

otherwise noted.

Note 4: This IC includes overtemperature protection that is intended

to protect the device during momentary overload conditions. Junction

temperature will exceed 150°C when overtemperature protection is active.

Continuous operation above the specified maximum operating junction

temperature may impair device reliability.

Note 5: Specified as the percentage of the period which T2P is low

impedance with respect to GND. Appears after PWRGD valid.