BU323Z

4

Motorola Bipolar Power Transistor Device Data

Figure 4. Energy Test Criteria for BU323Z

The shaded area represents the amount of energy the de-

vice can sustain, under given DC biases (IC/IB/VBE(off)/

RBE), without an external clamp; see the test schematic dia-

gram, Figure 2.

The transistor PASSES the Energy test if, for the inductive

loadandICPEAK/IB/VBE(off)biases,theVCEremainsoutside

the shaded area and greater than the VGATE minimum limit,

Figure 4a.

The transistor FAILS if the VCE is less than the VGATE

(minimum limit) at any point along the VCE/IC curve as

shown on Figures 4b, and 4c. This assures that hot spots

and uncontrolled avalanche are not being generated in the

die, and the transistor is not damaged, thus enabling the

sustained energy level required.

The transistor FAILS if its Collector/Emitter breakdown

voltage is less than the VGATE value, Figure 4d.

ICPEAK

Figure 4a.

IC

IC HIGH

IC LOW

VCE

VGATE MIN

ICPEAK

IC

IC HIGH

IC LOW

VCE

VGATE MIN

Figure 4b.

ICPEAK

IC

IC HIGH

IC LOW

VCE

VGATE MIN

Figure 4c.

ICPEAK

IC

IC HIGH

IC LOW

VCE

VGATE MIN

Figure 4d.