© 1998 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FSB619 Rev. 2.2

September 2015

FSB619

NPN Low-Saturation Transistor

Features

• This device is designed with high-current gain and low-saturation

voltage with collector currents up to 3 A continuous.

Ordering Information

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number

Marking

Package

Packing Method

FSB619

619

SSOT 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

50

V

Collector-Base Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current - Continuous

2

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

B

E

C