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mponents Industries, LLC

FSB660A Rev.

2

1

September 2018

FSB660A

PNP Low Saturation Transistor

Ordering Information

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty cycle operations.

Part Number

Marking

Package

Packing Method

FSB660A

660A

SSOT 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

-60

V

Collector-Base Voltage

-60

V

Emitter-Base Voltage

-5

V

Collector Current - Continuous

-2

A

-55 to +150

°C

SuperSOT™-3 (SOT-23)

Description

These devices are designed with high-current gain and

low saturation voltage with collector currents up to 2 A

continuous.

B

E

C