FSB660A datasheet(3/7 Pages) ONSEMI

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Semiconductor Components Industries, LLC

FSB660A Rev.

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics(4)

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width

≤ 300 μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Max.

Unit

Total Device Dissipation

500

RθJA

Thermal Resistance, Junction to Ambient

250

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage IC = -10 mA

-60

BVCBO

Collector-Base Breakdown Voltage

IC = -100 μA-60

BVEBO

Emitter-Base Breakdown Voltage

IE = -100 μA-5

ICBO

Collector Cut-Off Current

VCB = -30 V

-100

VCB = -30 V, TA = 100°C

-10

μA

IEBO

Emitter Cut-Off Current

VEB = -4 V

-100

hFE

DC Current Gain

IC = -100 mA, VCE = -2 V

IC = -500 mA, VCE = -2 V

250

550

IC = -1 A, VCE = -2 V

IC = -2 A, VCE = -2 V

VCE(sat) Collector-Emitter Saturation Voltage

IC = -1 A, IB = -100 mA

-300

IC = -2 A, IB = -200 mA

-300

VBE(sat) Base-Emitter Saturation Voltage

IC = -1 A, IB = -100 mV

-1.25

VBE(on) Base-Emitter On Voltage

IC = -1 A, VCE = -2 V

-1

Cob

Output Capacitance

VCB = -10 V, IE = 0, f = 1 MHz

Transition Frequency

IC = -100 mA, VCE = -5 V,

f = 100 MHz

MHz

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