BUL45 BUL45F

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)

(IC = 2.0 Adc, IB = 0.4 Adc)

VBE(sat)

—

—

0.84

0.89

1.2

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

(TC = 125°C)

VCE(sat)

—

—

0.175

0.150

0.25

—

Vdc

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.4 Adc)

(TC = 125°C)

VCE(sat)

—

—

0.25

0.275

0.4

—

Vdc

DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)

(TC = 125°C)

(TC = 125°C)

hFE

14

—

7.0

5.0

10

—

32

14

12

22

34

—

—

—

—

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

12

—

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

50

75

pF

Input Capacitance (VEB = 8.0 Vdc)

Cib

—

920

1200

pF

Dynamic Saturation Voltage:

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90%

of final IB1

(see Figure 18)

(IC = 1.0 Adc

IB1 = 100 mAdc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE

(Dyn sat)

—

—

1.75

4.4

—

—

Vdc

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90%

of final IB1

(see Figure 18)

IB1 = 100 mAdc

VCC = 300 V)

3.0

µs

(TC = 125°C)

VCE

(Dyn sat)

—

—

0.5

1.0

—

—

Vdc

rising IB1 reaches 90%

of final IB1

(see Figure 18)

(IC = 2.0 Adc

IB1 = 400 mAdc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE

(Dyn sat)

—

—

1.85

6.0

—

—

Vdc

IB1 = 400 mAdc

VCC = 300 V)

3.0

µs

(TC = 125°C)

—

—

0.5

1.0

—

—

SWITCHING CHARACTERISTICS: Resistive Load

Turn–On Time

(IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc

Pulse Width = 20

µs,

(TC = 125°C)

Duty Cycle < 20%

VCC = 300 V)

(TC = 125°C)

ton

—

—

75

120

110

—

ns

Turn–Off Time

Duty Cycle < 20%

VCC = 300 V)

(TC = 125°C)

toff

—

—

2.8

3.5

3.5

—

µs

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 µH, Vclamp = 300 Vdc)

Fall Time

(IC = 2.0 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc)

(TC = 125°C)

tfi

70

—

—

200

170

—

ns

Storage Time

(TC = 125°C)

tsi

2.6

—

—

4.2

3.8

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

230

400

350

—

ns

Fall Time

(IC = 1.0 Adc, IB1 = 100 mAdc

IB2 = 0.5 Adc)

(TC = 125°C)

tfi

—

—

110

100

150

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

1.1

1.5

1.7

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

170

170

250

—

ns

Fall Time

(IC = 2.0 Adc, IB1 = 250 mAdc

IB2 = 2.0 Adc)

(TC = 125°C)

tfi

—

80

120

ns

Storage Time

(TC = 125°C)

tsi

—

0.6

0.9

µs

Crossover Time

(TC = 125°C)

tc

—

175

300

ns