BUL45F datasheet(3/10 Pages) ONSEMI

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BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

0.01

100

IC, COLLECTOR CURRENT (AMPS)

1.00

10.00

100

0.01

0.10

1.00

10.00

2.0

0.01

IB, BASE CURRENT (AMPS)

1.0

0.01

IC, COLLECTOR CURRENT (AMPS)

0.10

1.0

0.8

0.4

0.01

IC, COLLECTOR CURRENT (AMPS)

0.10

1.00

10.00

1000

100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

1.0

0.1

1.00

10.00

10000

0.10

1.00

10.00

1.1

0.9

0.6

0.5

1.5

100

0.7

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain at @ 5 Volts

Figure 3. Collector–Emitter Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

VCE = 1 V

TJ = 125°C

TJ = 25°C

TJ = – 20°C

VCE = 5 V

TJ = 25°C

TJ = 125°C

TJ = – 20°C

TJ = 25°C

IC = 0.5 A

1.5

1 A

2 A

3 A

4 A

5 A

6 A

IC/IB = 10

IC/IB = 5

IC/IB = 10

IC/IB = 5

TJ = 25°C

TJ = 125°C

Cib

Cob

TJ = 25°C

f = 1 MHz

TJ = 25°C

TJ = 125°C

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