2015. 01. 10

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SEMICONDUCTOR

TECHNICAL DATA

BRI630

Revision No : 0

N-Channel Power MOSFET (200V/9A)

GENERAL DESCRIPTION

FEATURE

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

Special process technology for high ESD capability

APPLICATION

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

This advanced high voltage MOSFET is designed to stand high

energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain

Desighed for high voltage, high speed power supplies ,

converters, power motor controls and bridge circuits power supplies

Symbol

Rating

Unit

V

DSS

200

V

I

9

A

I

5.7

A

I

DM

A

V

GSS

±30

V

I

AR

A

9

E

AS

E

AR

P

2.5

W

P

46

W

R

QJC

℃

/W

R

QJA

℃

/W

T

-55 to 150

℃

TO-251 (I-PAK)

1 Gate

2 Drain

3 Source

1

2

3

DIM

MILLIMETERS

A

B

c

D

L

A1

b1

c1

D1

2 20 ± 0 2

1 50 ± 0 15

0 5 ± 0 07

6 50 ± 0 15

2 30 typ

7 70 ± 0 2

0 8 ± 0 1

0 5 ± 0 07

5 1 ± 0 10

e

4 6 ± 0 1

e1

E

5 4 ± 0 20

1 20 ± 0 05

36

160

4.6

mJ

mJ

dv/dt

5.5

V/ns

2.7

110