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J309 Datasheet(PDF) 5 Page - ON Semiconductor |
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J309 Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 8 page ![]() J308 J309 J310 5 Motorola Small–Signal Transistors, FETs and Diodes Device Data Figure 12. 450 MHz IMD Evaluation Amplifier BW (3 dB) – 36.5 MHz ID – 10 mAdc VDS – 20 Vdc Device case grounded IM test tones – f1 = 449.5 MHz, f2 = 450.5 MHz C1 = 1–10 pF Johanson Air variable trimmer. C2, C5 = 100 pF feed thru button capacitor. C3, C4, C6 = 0.5–6 pF Johanson Air variable trimmer. L1 = 1/8 ″ x 1/32″ x 1–5/8″ copper bar. L2, L4 = Ferroxcube Vk200 choke. L3 = 1/8 ″ x 1/32″ x 1–7/8″ copper bar. INPUT RS = 50 Ω C1 C2 L1 L2 VS S G D SHIELD C3 U310 C4 VD L3 C5 L4 C6 OUTPUT RL = 50 Ω Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm. Example of intercept point plot use: Assume two in–band signals of –20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of –90 dBm. Also, each signal level at the output will be –11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. Figure 13. Two Tone 3rd Order Intercept Point –20 –40 –60 –80 –100 –120 –120 +20 –100 –80 –60 INPUT POWER PER TONE (dBm) 0 +20 +40 –40 –20 0 3RD ORDER INTERCEPT POINT FUNDAMENTAL OUTPUT 3RD ORDER IMD OUTPUT U310 JFET VDS = 20 Vdc ID = 10 mAdc F1 = 449.5 MHz F2 = 450.5 MHz |
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