This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor.

The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25 C

230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

mW

C/W

Thermal Resistance –

Junction-to-Ambient

540 (Note 1)

370 (Note 2)

C/W

Thermal Resistance –

Junction-to-Lead

264 (Note 1)

287 (Note 2)

C/W

Junction and Storage

Temperature Range

–55 to +150

C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

SEMICONDUCTOR

TECHNICAL DATA

DTC109

SOT-23

GND

OUT

IN

2010. 4. 22

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Revision No : 0