2SC5859 datasheet(1/5 Pages) TOSHIBA

Part #	2SC5859

Description	TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

PDF	5 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC5859

2004-5-18

1

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SC5859

HORIZONTAL DEFLECTION OUTPUT FOR

HDTV, DIGITAL TV, PROJECTION TV

High Voltage

: VCBO = 1700 V

Low Saturation Voltage

: VCE (sat) = 3 V (max)

High Speed

: tf(2) = 0.1 µs (Typ.)

MAXIMUM RATINGS (Tc = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Base Voltage

VCBO

1700

V

Collector−Emitter Voltage

VCEO

750

V

Emitter−Base Voltage

VEBO

5

V

DC

IC

23

Collector Current

Pulse

ICP

46

A

Base Current

IB

11.5

A

Collector Power Dissipation

PC

210

W

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

−55~150

°C

ELECTRICAL CHARACTERISTICS (Tc = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

Min

Typ.

Max

UNIT

Collector Cut−off Current

ICBO

VCB = 1700 V, IE = 0

―

1

mA

Emitter Cut−off Current

IEBO

VEB = 5 V, IC = 0

―

100

µA

Collector − Emitter Breakdown Voltage

V (BR) CEO IC = 10 mA, IB = 0

750

―

V

hFE (1)

VCE = 5 V, IC = 2 A

20

―

55

hFE (2)

VCE = 5 V, IC = 8 A

10

―

22

DC Current Gain

hFE (3)

VCE = 5 V, IC = 18 A

4.5

―

8

―

Collector−Emitter Saturation Voltage

VCE (sat)

IC = 18 A, IB = 4.5 A

―

3

V

Base−Emitter Saturation Voltage

VBE (sat)

IC = 18 A, IB = 4.5 A

―

1.0

1.5

V

Transition Frequency

fT

VCE = 10 V, IC = 0.1 A

―

2

―

MHz

Collector Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

320

―

pF

Storage Time

tstg(1)

―

4

―

Fall Time

tf(1)

ICP = 8 A , IB1 (end) = 1 A

fH = 32 kHz

―

0.15

―

µs

Storage Time

tstg(2)

―

1.8

―

Switching Time

Fall Time

tf(2)

ICP = 7.5 A, IB1 (end) = 1 A

fH = 100 kHz

―

0.1

―

µs

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F2A

Weight: 9.75 g (typ.)

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