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EMG8 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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EMG8 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() SEMICONDUCTOR TECHNICAL DATA EMG8 2016. 08. 30 1/5 Revision No : 0 Dual NPN+NPN Digital transistors (built-in resistors) FEATURES Two DTC706 chips in a package Mounting cost and area can be cut in half Marking: G8 Absolute maximum ratings (Ta=25℃) Electrical Characteristics (Ta=25℃) Parameter Symbol Test conditions Min Typ Max Unit Input turn-on voltag V e i(on) VCC=0.3V, IO=5mA 1.3 V Input cut-off voltage Vi(off) VCC=5V, IO=100µA 0.5 V Output voltage VO(on) IO=5mA, Ii=0.25mA 0.3 V Input cut-off current Ii Vi =5V 1.8 mA Output cut-off current IO(off) VCC=50V, Vi=0 0.5 µA DC current gain Gi VO =5V, IO=10mA 80 Transition frequency fT VCE =10V, IC=5mA, f =100MHz 250 MHz Input resistance R1 3.29 6.11 K Ω Resistance ratio R2/R1 8 12 Symbol Parameter Value Units VCC Supply Voltage 50 V Vi Input voltage -5~30 V IO Output current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150 ℃ Tstg Storage temperature -55~+150 ℃ SOT-553 |
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Similar Description - EMG8 |
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