SEMICONDUCTOR

TECHNICAL DATA

EMZ1

2017. 08. 30

1/4

Revision No : 0

SOT-563

Dual NPN+PNP transistors

FEATURES

Marking: Z1

Equivalent circuit

1



FTC2412 and FTA1037 are housed independently in a package



Transistor elements independent, eliminating interference



Mounting cost and area can be cut in half

Z1

unless otherwise noted)

Value

a

r

a

P

l

o

b

m

y

S

meter

TR1

TR2

Unit

Collector-Base Voltage

60

-60

V

Collector-Emitter Voltage

50

-50

V

Emitter-Base Voltage

7

-6

V

Collector Current

150

-150

mA

Collector Power Dissipation

150(Total)*

mW

Thermal Resistance from Junction to Ambient

833

℃/W

Junction Temperature

150

℃

Storage Temperature Range

-55~+150

℃

*120mW per element must not be exceeded