4

TMCS1100

SBOS820 – SEPTEMBER 2019

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Copyright © 2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

GND – 0.3

6

V

Analog input

VREF

GND – 0.3

V

Analog output

VOUT

GND – 0.3

V

Junction temperature

–65

150

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

±1000

(1)

(2)

Input current safe operating area is constrained by junction temperature. Recommended condition based on the TMCS1100EVM. Rating

is derated for elevated ambient temperatures.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

(1)

Input voltage

–600

600

(2)

Input current (Continuous dc or rms current)

–20

20

A

Operating supply voltage, TMCS1100A1-3

3

5

5.5

V

Operating supply voltage, TMCS1100A4

4.5

5

5.5

V

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

TMCS1100

UNIT

D (SOIC)

8 PINS

Junction-to-ambient thermal resistance

36.6

°C/W

Junction-to-case (top) thermal resistance

50.7

°C/W

Junction-to-board thermal resistance

9.6

°C/W

Junction-to-top characterization parameter

–0.1

°C/W

Junction-to-board characterization parameter

11.7

°C/W

Junction-to-case (bottom) thermal resistance

N/A

°C/W