BUJD103AD datasheet(4/10 Pages) WEEN

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BUJ103AD

Silicon diffused power transistor

[1]

Measured with half sine-wave voltage (curve tracer).

hFEsat

DC saturation current gain

IC = 2.0 A; VCE = 5 V

IC = 3.0 A; VCE = 5 V

12.5

Dynamic characteristics

Switching times (resistive load); see Figure 5 and 6

ton

turn-on time

ICon = 2.5 A; IBon = IBoff = 0.5 A;

RL =75 

0.52

0.6

s

tstg

storage time

2.7

3.3

s

fall time

0.3

0.35

s

Switching times (inductive load); see Figure 7 and 8

tstg

storage time

ICon = 2 A; IBon = 0.4 A; LB = 1 H;

VBB = 5V

-1.2

1.4

s

fall time

Switching times (inductive load); see Figure 7 and 8

tstg

storage time

ICon = 2 A; IBon = 0.4 A; LB = 1 H;

VBB = 5V; Tj =100 C

--1.8

s

fall time

120

Table 5.

Characteristics …continued

Tmb = 25 C; unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Fig 3. Test circuit for collector-emitter sustaining

voltage

Fig 4. Oscilloscope display for collector-emitter

sustaining voltage test waveform

001aab987

horizontal

300

6 V

vertical

oscilloscope

50 V

100

Ω to 200 Ω

30 Hz to 60 Hz

001aab988

VCE (V)

min

VCEOsus

(mA)

100

250

WeEn Semiconductors

BUJ103AD

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Product data sheet

Rev.3 18 October 2016

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