BUJD103AD datasheet(7/10 Pages) WEEN

7 / 10 page

BUJ103AD

Silicon diffused power transistor

7. Package information

Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.

VCEclamp  1000 V; VCC = 150 V; VBB = 5 V; LB =1 H;

LC =200 H.

Tj  Tj(max).

Fig 13. Test circuit for reverse bias safe operating

area

Fig 14. Reverse bias safe operating area

Tmb  25 C; Mounted with heatsink compound and 30  5 Newton force on the center of the envelope.

(1) Ptot maximum and Ptot peak maximum lines.

(2) Second breakdown limits.

(3) I = Region of permissible DC operation.

II = Extension for repetitive pulse operation.

III = Extension during turn-on in single transistor converters provided that RBE  100  and tp  0.6 s.

Fig 15. Forward bias safe operating area

001aab999

DUT

IBon

VBB

VCC

VCL(CE)

probe point

VCEclamp (V)

1000

800

400

600

200

001aac000

(A)

001aac001

10−1

10−2

102

(A)

10−3

VCEclamp (V)

103

102

(1)

100

μs

200

μs

I(3)

tp = 20 μs

duty cycle = 0.01

μs

500

μs

II(3)

III(3)

(2)

ICM(max)

IC(max)

WeEn Semiconductors

BUJ103AD

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev.3 18 October 2016

7 / 10

BUJD103AD Datasheet(PDF) 7 Page - WeEn Semiconductors

BUJD103AD Datasheet(HTML) 7 Page - WeEn Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL