DATA SHEET

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NPN SILICON RF TRANSISTOR

2SC5509

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER

⋅⋅⋅⋅ LOW NOISE ⋅⋅⋅⋅ HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

Document No. PU10009EJ01V0DS (1st edition)

Date Published October 2001 CP(K)

Printed in Japan

©

©

©

FEATURES

• Ideal for medium output power amplification

• Flat-lead 4-pin thin-type super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5509

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5509-T2

3 kpcs/reel

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

15

V

Collector to Emitter Voltage

3.3

V

Emitter to Base Voltage

1.5

V

Collector Current

100

mA

Total Power Dissipation

Note

190

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Free Air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.