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TIP142T Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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TIP142T Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 3 page ![]() 2015. 10. 14 2/3 Revision No : 0 TIP142T Electrical Characteristics (Ta=25℃) Parameter Symbol Test Conditions Min Typ Max Unit Collector to Emitter Breakdown Voltage VCEO IC=30mA IB=0 100 V Collector Cut-Off Current ICEO VCE=50V IB=0 2 mA Collector Cut-Off Current ICBO VCB=100V IE=0 1 mA Emitter Cut-Off Current IEBO VEB=5V IC=0 2 mA DC Current Gain(1) hFE(1) VCE=4V IC=5A 1000 DC Current Gain(2) hFE(2) VCE=4V IC=10A 500 Collector to Emitter Saturation Voltage(1) VCE(sat)(1) IC=5A IB=10mA 2 V Collector to Emitter Saturation Voltage(2) VCE(sat)(2) IC=10A IB=40mA 3 V Base to Emitter Saturation Voltage VBE(sat) IC=10A IB=40mA 3.5 V Base to Emitter Voltage VBE VCE=4V IC=10A 3 V t e m i T y a l e D D 5 1 . 0 μs t e m i T e s i R R 5 5 . 0 μs t e m i T e g a r o t S STG 5 . 2 μs t e m i T ll a F F VCC=30V IC=5A IB1=20mA IB2=20mA RL=6Ω 2.5 μs |
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