SEMICONDUCTOR

TECHNICAL DATA

FDR301U

2014. 05. 28

1/3

Revision No : 0

Silicon Hot–Carrier Diodes

Schottky Barrier Diode

These devices are designed primarily for high–efficiency UHF and VHF

detector applications. They are readily adaptable to many other fast switching

RF and digital applications. They are supplied in an inexpensive plastic package

for low–cost, high–volume consumer and industrial/commercial requirements.

They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Very Low Capacitance – 1.5 pF (Max) @ V

• Low Reverse Leakage – I

• Device Marking: 4T

MAXIMUM RATINGS ( T

V

g

n

i

t

a

R

l

o

b

m

y

S

a lu e

Unit

Reverse Voltage

30

Volts

THERMAL CHARACTERISTICS

Symbol

Characteristic

Ma x

Unit

Total Device Dissipation FR–5 Board,*

200

mW

Derate above 25°C

1.57

mW/°C

Thermal Resistance Junction to Ambient

635

°C/W

Junction and Storage

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ORDERING INFORMATION

Device

g

n

i

p

p

i

h

S

g

n

i

k

r

a

M

FDR301U

4T

3000 / Tape & Reel

30 VOLTS SILICON

HOT–CARRIER DETECTO R

AND SWITCHING DIODE S

Characteristic

Symbol

Min

Typ

Ma x

Unit

Reverse Breakdown Voltage

30

—

—

Volts

µA)

Diode Capacitance

—

0.9

1.5

pF

Reverse Leakage

—

13

200

nAdc

Forward Voltage

—

0.38

0.45

Vdc

Forward Voltage

—

0.52

0.6

Vdc

compliance with RoHS requirements.

SC-76 / SOD-323

USC

2

2

ANODE

1

CATHODE

1