2012. 04. 27

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SEMICONDUCTOR

TECHNICAL DATA

BD433/435/437

Revision No : 0

1 EMITTER

2 COLLECTOR

3 BASE

TO-126

A

B

DIM

MILLIMETERS

8.3 MAX

A

B

11.3±0.3

C

C

4.15 TYP

D

D

3.2±0.2

E

E

2.0±0.2

F

F

2.8±0.1

G

3.2±0.1

G

H

H

1.27±0.1

I

I

1.40±0.1

K

K

15.5±0.2

L

L

0.76±0.1

M

M

2.28 TYP

O

P

O

4.56±0.1

P

0.6 MAX

1

2

3

BD433/435/437

TRANSISTOR (NPN)

FEATURES

Amplifier and Switching Applications

Symbol

Parameter

Value

Unit

Collector-Base Voltage

BD433

BD435

BD437

22

32

45

V

Collector-Emitter Voltage

BD433

BD435

BD437

22

32

45

V

Emitter-Base Voltage

5

V

Collector Current –Continuous

4

A

Collector Power Dissipation

1.25

W

Junction Temperature

150

℃

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

BD433

BD435

BD437

22

32

45

V

Collector-emitter breakdown voltage

(1)

BD433

BD435

BD437

22

32

45

V

Emitter-base breakdown voltage

V

5

0

=

Collector cut-off current

BD433

BD435

BD437

1

μA

Collector cut-off current

BD433

BD435

BD437

10

μA

Emitter cut-off current

1

μA

(1)

85

(1)

BD433/BD435

BD437

40

30

DC current gain

(1)

BD433/BD435

BD437

50

40

Collector-emitter saturation voltage

(1)

BD433/BD435

BD437

0.5

0.6

V

Base-emitter voltage

(1)

BD433/BD435

BD437

1.1

1.2

V

Transition frequency

3

MHz