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TLP291 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP291 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 13 page ![]() TLP291 2012-04-26 3 Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C) CHARACTERISTIC SYMBOL NOTE RATING UNIT Input forward current IF 50 mA Input forward current derating (Ta≥90°C) ∆IF /ΔTa -1.5 mA /°C Input forward current (pulsed ) IFP (Note 2) 1 A Input reverse voltage VR 5 V Input power dissipation PD 100 mW Input power dissipation derating (Ta ≥ 90°C) ΔPD/ΔTa -3.0 mW/°C Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation PC 150 mW Collector power dissipation derating(Ta≥25°C) ∆PC /ΔTa -1.5 mW /°C Junction temperature Tj 125 °C Operating temperature range Topr -55 to 110 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 200 mW Total package power dissipation derating(Ta≥25°C) ∆PT /ΔTa -2.0 mW /°C Isolation voltage BVS (Note3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width ≤ 100μs, frequency 100Hz Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and DETECTOR side pins shorted together. Electrical Characteristics (Unless otherwise specified, Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Input forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Input reverse current IR VR = 5 V - - 5 μA Input capacitance CT V = 0 V, f = 1 MHz - 30 - pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 - - V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 - - V VCE = 48 V - 0.01 0.08 μA Dark current ICEO VCE = 48 V, Ta = 85°C - 2 50 μA Collector-emitter capacitance CCE V = 0 V, f = 1 MHz - 10 - pF Free Datasheet http://www.datasheet4u.net/ |
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