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TLP291 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TLP291
Description  GaAs IRED & PHOTO-TRANSISTOR
PDF  13 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP291 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TLP291
2012-04-26
3
Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
NOTE
RATING
UNIT
Input forward current
IF
50
mA
Input forward current derating (Ta≥90°C)
∆IF /ΔTa
-1.5
mA /°C
Input forward current (pulsed )
IFP
(Note 2)
1
A
Input reverse voltage
VR
5
V
Input power dissipation
PD
100
mW
Input power dissipation derating (Ta ≥ 90°C)
ΔPD/ΔTa
-3.0
mW/°C
Junction temperature
Tj
125
°C
Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Collector power dissipation derating(Ta≥25°C)
∆PC /ΔTa
-1.5
mW /°C
Junction temperature
Tj
125
°C
Operating temperature range
Topr
-55 to 110
°C
Storage temperature range
Tstg
-55 to 125
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
PT
200
mW
Total package power dissipation derating(Ta≥25°C)
∆PT /ΔTa
-2.0
mW /°C
Isolation voltage
BVS
(Note3)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Input forward voltage
VF
IF = 10 mA
1.1
1.25
1.4
V
Input reverse current
IR
VR = 5 V
-
-
5
μA
Input capacitance
CT
V = 0 V, f = 1 MHz
-
30
-
pF
Collector-emitter breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
-
-
V
Emitter-collector breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
-
-
V
VCE = 48 V
-
0.01
0.08
μA
Dark current
ICEO
VCE = 48 V, Ta = 85°C
-
2
50
μA
Collector-emitter capacitance
CCE
V = 0 V, f = 1 MHz
-
10
-
pF
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