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TLP291 Datasheet(PDF) 10 Page - Toshiba Semiconductor

Part # TLP291
Description  GaAs IRED & PHOTO-TRANSISTOR
PDF  13 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP291 Datasheet(HTML) 10 Page - Toshiba Semiconductor

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TLP291
2012-04-26
10
EN 60747-5-5 Option:(V4)
Types
: TLP291
Type designations for “option: (V4)”, which are tested under EN 60747 requirements.
(e.g.): TLP291 (V4GB-TP,E
V4 : EN 60747 option
GB: CTR rank type
TP : Standard tape & reel type
E : [[G]]/RoHS COMPATIBLE (Note4 )
Note: Use TOSHIBA standard type number for safety standard application.
(e.g.): TLP291(V4GB-TP,E
TLP291
Note4: Please contact your Toshiba sales representative for details on environmental information such
as the product’s RoHS compatibility.
RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and
electronics equipment.
EN 60747 Isolation Characteristics
Description
Symbol
Rating
Unit
Application classification
for rated mains voltage ≤ 150Vrms
for rated mains voltage ≤ 300Vrms
I-IV
I-III
-
Climatic classification
55 / 110 / 21
-
Pollution degree
2
-
Maximum operating insulation voltage
VIORM
707
Vpk
Input to output test voltage, Method A
Vpr=1.5 × VIORM, type and sample test
tp=10s, partial discharge<5pC
Vpr
1060
Vpk
Input to output test voltage, Method B
Vpr=1.875 × VIORM, 100% production test
tp=1s, partial discharge<5pC
Vpr
1325
Vpk
Highest permissible overvoltage
(transient overvoltage, tpr=60s)
VTR
6000
Vpk
Safety limiting values (max. permissible ratings in case of fault,
also refer to thermal derating curve)
current (input current: IF, Psi=0mW)
power (output or total power dissipation)
temperature
Isi
Psi
Tsi
250
400
150
mA
mW
°C
Insulation resistance
VIO=500V, Ta=Tsi
Rsi
>= 109
Ω
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