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CAT661ESA Datasheet(PDF) 3 Page - Catalyst Semiconductor

Part # CAT661ESA
Description  High Frequency 100mA CMOS Charge Pump, Inverter/Doubler
PDF  16 Pages
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Manufacturer  CATALYST [Catalyst Semiconductor]
Direct Link  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT661ESA Datasheet(HTML) 3 Page - Catalyst Semiconductor

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CAT661
3
Doc. No. 5003, Rev. J
ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (TA = 70
°C)
Plastic DIP ................................................ 730mW
SO ............................................................ 500mW
TDFN ............................................................... 1W
Operating Ambient Temperature Ranges
CAT661E .............. -40
°C to 85°C
Storage Temperature ......................... -65
°C to 160°C
Lead Soldering Temperature (10 sec) ............. 300
°C
ESD Rating-Human Body Model ..................... 2000V
Note: TA = Ambient Temperature
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Parameter
Symbol
Conditions
Min.
Typ
Max.
Units
Inverter: LV = Open. RL = 1k
Ω
3.0
5.5
V
Supply Voltage
VS
Inverter: LV = GND. RL = 1k
Ω
1.5
5.5
Doubler: LV = OUT. RL = 1k
Ω
2.5
5.5
Supply Current
IS
BOOST/FC = open, LV = Open
0.2
0.5
mA
BOOST/FC = V+ , LV = Open
1
3
Output Current
IOUT
OUT is more negative than -4V
100
mA
Output Resistance
RO
C1 = C2 = 10
µF,
3.5
10
Ω
BOOST/FC = V+ (C1, C2 ESR
≤ 0.5Ω)
C1 = C2 = 100
µF (Note 2)
3.5
10
Oscillator Frequency FOSC
BOOST/FC = Open
10
25
kHz
(Note 3)
BOOST/FC = V+
80
135
OSC Input Current
IOSC
BOOST/FC = Open
±2
µA
BOOST/FC = V+
±10
Power Efficiency
PE
RL = 1k
Ω connected between V+ and
96
98
%
OUT, TA = 25
°C (Doubler)
RL = 500
Ω connected between GND and
92
96
OUT, TA = 25
°C (Inverter)
IL = 100mA to GND, TA = 25
°C (Inverter)
88
Voltage Conversion
VEFF
No load, TA = 25
°C
99
99.9
%
Efficiency
1. In Figure 1, test circuit electrolytic capacitors C1 and C2 are 100
µF and have 0.2Ω maximum ESR. Higher ESR levels may reduce
efficiency and output voltage.
2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and
efficiency keep external capacitor ESR under 0.2
Ω.
3. FOSC is tested with COSC = 100pF to minimize test fixture loading. The test is correlated back to COSC=0pF to simulate the capacitance at
OSC when the device is inserted into a test socket without an external COSC.
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 100
µF, Boost/FC = Open, COSC = 0pF, and Test Circuit is Figure 1 unless otherwise noted.
Temperature is TA = TAMIN to TAMAX unless otherwise noted.



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