VREF
VMODE
GND
RF IN
VCC1
GND
GND
RF OUT
GND
VCC2
Features
➔ Advanced third-generation GaAs HBT process
➔ 4x4mm 50Ω
Ω internally matched package
➔ 28 dBm linear output power
➔ 40% power added efficiency
➔ 54% AMPS power added efficiency
➔ -50 dBc adjacent channel power rejection
➔ 3V regulated voltage
➔ 55mA quiescent current (up to 28 dBm)
➔ 29 dB linear gain
Typical Applications
➔ 3V CDMA/AMPS cellular handsets
➔ 3V CDMA 2000 1x cellular handsets
➔ Spread spectrum systems
RF MICRO DEVICES®, RFMD®, Providing Communication Solutions™ are trademarks of RFMD, LLC. © RFMD 2003.
RF6100-2 Linear Amplifier
www .rfmd.com
For sales or technical support, contact RFMD at
336-678-5570 or callcenter@rfmd.com.
7628 Thorndike Road, Greensboro, NC 27409-9421
Phone 336-664-1233 • Fax 336-931-7454
RF6100-2
Application Schematic
RF Micro Devices®
3V 900 MHz
Linear Amplifier
The RF6100-2 is a high-power, high-efficiency linear amplifier
module specifically designed for 3V handheld systems. The
device is manufactured on an advanced third-generation
GaAs HBT process and has been designed for use as the final
RF amplifier in 3V IS-95/CDMA 2000 1x/AMPS handheld
digital cellular equipment, spread-spectrum systems and other
applications in the 824 MHz to 849 MHz band. The RF6100-2
has a digital control line for low power applications in order
to lower quiescent current. The device is self-contained with
50
Ω input and output that is matched to obtain optimum
power, efficiency and linearity. The module is an ultra-small
4x4mm land grid array with backside ground. The RF6100-2
is footprint compatible with industry standard 4x4mm CDMA
modules and requires only one decoupling capacitor.
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