PDTA115TMB datasheet(5/12 Pages) NEXPERIA

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PDTA115TMB

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Product data sheet

Rev. 1 — 2 July 2012

4 of 11

NXP Semiconductors

PDTA115TMB

PNP resistor-equipped transistor; R1 = 100 k

Ω, R2 = open

Characteristics

[1]

Characteristics of built-in transistor.

FR4 PCB, standard footprint

Fig 3.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =-50 V; IE =0 A; Tamb = 25 °C

-100

ICEO

collector-emitter cut-off

current

VCE =-30 V; IB =0 A; Tamb = 25 °C

---1

µA

VCE =-30 V; IB =0 A; Tj = 150 °C

-5

µA

IEBO

emitter-base cut-off

current

VEB =-5V; IC =0A; Tamb = 25 °C

-100

hFE

DC current gain

VCE =-5V; IC =-1mA; Tamb = 25 °C

100

VCEsat

collector-emitter

saturation voltage

IC =-5mA; IB = -0.25 mA; Tamb = 25 °C

---150

bias resistor 1 (input)

Tamb = 25 °C

100

130

Ω

collector capacitance

VCB =-10 V; IE =0 A; ie =0A;

f=1MHz; Tamb =25°C

--3

transition frequency

VCE =-5V; IC = -10 mA; f = 100 MHz;

Tamb =25°C

[1]

180

MHz

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