PDTA115TMB datasheet(6/12 Pages) NEXPERIA

Part #	PDTA115TMB

Description	PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open

PDF	12 Pages

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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PDTA115TMB

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Product data sheet

Rev. 1 — 2 July 2012

5 of 11

NXP Semiconductors

PDTA115TMB

PNP resistor-equipped transistor; R1 = 100 k

Ω, R2 = open

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig 4.

DC current gain as a function of collector

current; typical values

Fig 5.

Collector-emitter saturation voltage as a

function of collector current; typical values

f = 1 MHz; Tamb = 25 °C

VCE = -5 V; Tamb = 25 °C

Fig 6.

Collector capacitance as a function of

collector-base voltage; typical values of built-in

transistor

Fig 7.

Transition frequency as a function of collector

current; typical values of built-in transistor

001aab511

IC (mA)

−10−1

−102

−10

−1

102

103

hFE

(1)

(2)

(3)

001aab512

IC (mA)

−10−1

−102

−10

−1

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

VCB (V)

-50

-40

-20

-30

-10

006aac762

(pF)

006aac763

IC (mA)

-10-1

-102

-10

-1

102

103

(MHz)

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