PDTB113 datasheet(13/23 Pages) NEXPERIA

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PDTB113_123_143_114EQA_SER

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Product data sheet

Rev. 1 — 30 March 2016

13 of 23

Nexperia

PDTB113/123/143/114EQA

50 V, 500 mA PNP resistor-equipped transistors

VCE = 5V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

Tamb =25 C

Fig 19. PDTB143EQA: DC current gain as a function of

collector current; typical values

Fig 20. PDTB143EQA: Collector current as a function

of collector-emitter voltage; typical values

VCE = 0.3 V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

VCE = 5V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

Fig 21. PDTB143EQA: On-state input voltage as a

function of collector current; typical values

Fig 22. PDTB143EQA: Off-state input voltage as a

function of collector current; typical values

IC (mA)

-10-1

-103

-10

-102

-1

aaa-020294

102

103

hFE

(1)

(2)

(3)

VCE (V)

0-5

-4

-2

-3

-1

aaa-020295

-0.2

-0.3

-0.1

-0.4

-0.5

(A)

IB (mA) = -2.8

-2.24

-1.68

-1.12

-0.56

-0.28

-0.84

-1.4

-1.96

-2.52

IC (mA)

-10-1

-104

-10

-103

-102

-1

aaa-020298

-10

-1

-102

VI(on)

(V)

-10-1

(1)

(2)

(3)

IC (mA)

-10-1

-10

-1

aaa-020296

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

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