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PDTC144WMB Datasheet(PDF) 6 Page - Nexperia B.V. All rights reserved |
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PDTC144WMB Datasheet(HTML) 6 Page - Nexperia B.V. All rights reserved |
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6 / 12 page ![]() PDTC144WMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 2 July 2012 5 of 11 NXP Semiconductors PDTC144WMB NPN resistor-equipped transistor; R1 = 47 k Ω, R2 = 22 kΩ VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig 4. DC current gain as a function of collector current; typical values Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = -40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = -40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 6. On-state input voltage as a function of collector current; typical values Fig 7. Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 102 10 1 006aad104 102 10 103 hFE 1 (1) (2) (3) 006aad105 IC (mA) 10-1 10 1 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aad106 IC (mA) 10-1 102 10 1 1 10 VI(on) (V) 10-1 (1) (2) (3) 006aad107 IC (mA) 10-1 10 1 10 VI(off) (V) 1 (1) (2) (3) |
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