PMF63UNE datasheet(1/15 Pages) NEXPERIA

Part #	PMF63UNE

Description	20 V, N-channel Trench MOSFET

PDF	15 Pages

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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PMF63UNE

20 V, N-channel Trench MOSFET

20 April 2016

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323

(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

• Trench MOSFET technology

• Low threshold voltage

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

• LED driver

• Power management

• Low-side loadswitch

• Switching circuits

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

20

V

VGS

gate-source voltage

Tj = 25 °C

-8

-

8

V

ID

drain current

VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

2.2

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 2 A; Tj = 25 °C

-

57

65

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

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PMF63UNE Datasheet(PDF) 1 Page - Nexperia B.V. All rights reserved

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