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Document Number: 73542

S-52083–Rev. A, 10-Oct-05

Vishay Siliconix

SiP12202

New Product

Notes

a. Device mounted with all leads soldered or welded to PC board

b. Derate 14 mW/°C above + 85 °C

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is

not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Unit

6

V

- 0.3 to 6

560

mW

Maximum Junction Temperature

125

°C

Storage Temperature

- 55 to + 150

RECOMMENDED OPERATING RANGE

Parameter

Limit

Unit

Input Voltage Range

2.7 to 5.5

V

Output Voltage Adjustment Range

0.6 to 5.5

Operating Temperature Range

- 40 to + 85

°C

SPECIFICATIONS

Parameter

Symbol

Test Condition Unless Specified

Limits

-40 to 85°C

Unit

Controller

Input Voltage

2.7

5.5

V

Quiescent Current

Non Switching

0.6

1

mA

Switching Oscillator Frequency

400

500

600

kHz

Oscillator Ramp Amplitude

∆V

OSC

1

V

Feedback Voltage

0.591

0.600

0.609

V

0.585

0.615

FB input Bias Current

100

nA

Transconductance

GM

2

mA/V

Soft Start

4

ms

Inputs and Outputs

SD Input Voltage

0.15

V

Shutdown Current

30

60

µA

MOSFET Drivers

Break-before-make-time

30

ns

Highside Driver

Output Voltage

4.5

V

On resistance

1.3

1.9

Ω

2.8

4.4

Ω

Rise time - PFET Turn On

64

ns

Fall time - PFET Turn Off

8

Lowside Driver

Output Voltage

4.5

V

On resistance

5.5

8.2

Ω

0.85

1.4

Ω

Rise time - NFET Turn On

83

ns

Fall time - NFET Turn Off

6.6