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FTB772T Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTB772T Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() 2015. 4. 14 1/3 SEMICONDUCTOR TECHNICAL DATA FTB772T Revision No : 0 TRANSISTOR (PNP) FEATURES Power Dissipation:1.25W Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise not) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Dissipation 1.25 W Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter s n o i t i d n o c t s e T l o b m y S Min Typ Max Unit Collector -base breakdown voltage V(BR)CBO Ic=-100uA , IE=0 -40 V Collector -emitter breakdown voltage V(BR)CEO IC=-10mA, I B=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V Collector cut-off current ICBO VCB=-40 V, IE =0 -1 μA Collector cut-off current ICEO VCE=-30V , IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V,I C =0 -1 μA hFE(1) VCE=-2V,IC=-1A 60 400 DC current gain hFE(2) VCE=-2V,IC=-100mA 32 Collector -emitter saturation voltage VCE(sat) I C=-2A,IB =-0.2A -0.5 V Base-emitter saturation voltage VBE(sat) I C=-2A,IB =-0.2A -1.5 V Transition frequency fT VCE=-5V,I C =-0.1A f=10MHz 50 MHz CLASSIFICATION of hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 SOT-223 1. BASE 2. COLLECTOR 3. EMITTER TJ JunctionTemperature 150 ℃ RӨJA Thermal Resistance from Junction to Ambient 100 ℃/W MARKING: Solid dot = Green molding compound device, if none,the normal device. |
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