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STS1C1S250

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(5) Pulse width limited by safe operating area

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,

but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In

this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Rise Time

N-CHANNEL

P-CHANNEL

(Resistive, see Figure 3)

n-ch

p-ch

n-ch

p-ch

9

12

11

22

ns

ns

ns

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

N-CHANNEL

P-CHANNEL

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

15

16

1.9

1.4

7

7.6

20

21

nC

nC

nC

nC

nC

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-off Delay Time

Fall Time

N-CHANNEL

P-CHANNEL

(see test circuit, Figure 5)

n-ch

p-ch

n-ch

p-ch

31

29.5

11

7

ns

ns

ns

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

n-ch

p-ch

n-ch

p-ch

0.75

0.6

3

2.4

A

A

A

A

Forward On Voltage

n-ch

p-ch

1.5

1.5

V

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Curren

N-CHANNEL

P-CHANNEL

(see test circuit, Figure 5)

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

127

143

450

806

7

11

ns

ns

nC

nC

A

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 500 µA (Open Drain)

± 25

V