FTB5240 datasheet(1/5 Pages) FS

Part #	FTB5240

Description	General Purpose Transistors

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 5 page

SEMICONDUCTOR

TECHNICAL DATA

FTB5240

2014. 07. 01

1/5

Revision No : 0

SOT–23

1

3

2

General Purpose Transistors

-40V,-2A Low VCE(sat) PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

-40

V

Collector–Base Voltage

V CBO

-40

V

Emitter–Base Voltage

V EBO

-5.0

V

Collector Current — Continuous

I C

-2

A

total power dissipation

D

Junction temperature

T j

150

°C

Storage temperature

T stg

-65 ~+150

°C

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Symbol

Parameter

Conditions

Value

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air;note 1

in free air;note 2

417

K/W

260

K/W

• Low collector-emitter saturation voltage

• High current capability

• Improved device reliability due to reduced heat generation

• Replacement for SOT89/SOT-223 standard packaged transistors.

• Supply line switching circuits

• Battery management applications

• DC/DC converter applications

• Strobe flash units

• Heavy duty battery powered equipment (motor and lamp drivers).

PNP low VCEsat transistor in a SOT-23 plastic package. NPN complement: FTD4240

We declare that the material of product compliance with RoHS requirements.

•

P

0.3

W

FTB5240

ZF

3000/Tape & Reel

Device

Marking

Shipping

DESCRIPTION

APPLICATIONS

FEATURES

1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.

Notes:

2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm.2

2

EMITTER

3

COLLECTOR

1

BASE

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