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FTB5240 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTB5240 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() FTB5240 2014. 07. 01 2/5 Revision No : 0 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = −30 V; IE = 0 − −100 nA IEBO emitter-base cut-off current VBE = −4 V; IC = 0 − −100 nA hFE DC current gain VCE = −2 V IC = −100 mA 300 − IC = −500 mA 260 − IC = −1 A 210 − IC = −2 A 100 − VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA − −100 mV IC = −500 mA; IB = −50 mA − −110 mV IC = −750 mA; IB = −15 mA − −225 mV IC = −1 A; IB = −50 mA − −225 mV IC = −2 A; IB = −200 mA − −350 mV VBE(on) base-emitter turn-on voltage VCE = −2 V; IC = −100 mA − −0.75 V VBEsat base-emitter saturation voltage IC = −2 A; IB = −200 mA − −1.1 V fT transition frequency IC = −100 mA; VCE = −10 V; f = 100 MHz 100 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; − 28 pF f = 1 MHz |
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