FTC2316 datasheet(1/2 Pages) FS

Part #	FTC2316

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

SEMICONDUCTOR

TECHNICAL DATA

FTC2316

2011. 6. 08

1/2

Revision No : 0

1. EMITTER

2. COLLECTOR

3. BASE

TO-92L

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

L

8.2 MAX

5.1 MAX

1.58 MAX

0.7 TYP

1.27 TYP

2.54 TYP

14.20 MAX

D

G

F

E

0.55 MAX

B

0.45 MAX

4.10 MAX

L

C

1

2

3

FTC2316 TRANSISTOR (NPN)

FEATURES

Driver Stage Amplifier

Complement to FTA916

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

V

0

2

1

e

g

a

tl

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

VCEO

Collector-Emitter Voltage

120

V

VEBO

V

5

e

g

a

tl

o

V

e

s

a

B

-

r

e

tt

i

m

E

IC

Collector Current -Continuous

800

mA

PC

Collector Power Dissipation

900

mW

TJ

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

it

c

n

u

J

℃

Tstg

0

5

1

-

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

ELECTRICAL

CHARACTERISTICS (Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA, IE

V

0

2

1

0

=

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA, IB=0

120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA, IC

V

5

0

=

Collector cut-off current

ICBO

VCB=120V, IE

A

µ

1

.

0

=

hFE(1)

VCE=5V, IC=10mA

60

DC current gain

hFE(2)

VCE=5V, IC=100mA

80

240

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

1

V

Transition frequency

fT

VCE=5V, IC=100mA

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

30

pF

CLASSIFICATION OF

hFE(2)

Rank

Y

O

Range

0

4

2

-

0

2

1

0

6

1

-

0

8

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