BUL85D datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.56

62.5

o C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 500 V

Tj = 125

100

500

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 9 V

100

µA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

250

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 4 A

IB = 0.8 A

IC = 8 A

IB = 1.6 A

0.1

0.3

0.6

1.2

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 8 A

IB = 1.6 A

1.1

1.5

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 0.5 A

VCE = 5 V

IC = 14 A

VCE = 10 V

RESISTIVE LOAD

Storage Time

Fall Time

IC = 4 A

VCC = 150 V

IB(on) = -IB(off) = 0.8 A

≥ 30 µs

(see figure 2)

1.2

1.8

2.4

250

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4 A

VCL = 200 V

IB = 0.8 A

VBE(off) = -3 V

RBB = 0

Ω

≥ 30µs

(see figure 1)

0.7

µs

Diode Forward Voltage

IC = 5 A

1.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL85D

2/7

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