830 datasheet(1/12 Pages) WXDH

Part #	830

Description	5A 500V N-channel Enhancement Mode Power MOSFET

PDF	12 Pages

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Manufacturer	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

Direct Link	http://www.jswxdh.cn

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Jiangsu Donghai Semiconductor Technology CO.,LTD.

Rev. 1.0

Page 1 of 12

830/F830/I830/

E830/B830/D830

5A 500V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

Parameter

Symbol

Rating

Units

830/I830/E830/

B830/D830

F830

Drian-to-Source Voltage

VDSS

500

V

Gate-to-Source Voltage

VGSS

±30

V

Continuous Drain Current

TC=25℃

ID

5

A

TC=100℃

3.4

A

Pulsed Drain Current(1)

IDM

20

A

Single Pulse Avalanche Energy(4)

EAS

200

mJ

Repetitive Avalanche Energy(4)

EAR

30

mJ

Repetitive Avalanche Current(4)

IAR

2.5

A

Peak Diode Recovery dv/dt(5)

dv/dt

5

V/ns

Power Dissipation

Ta=25℃

Ptot

2.0

W

TC=25℃

Ptot

75

30

W

Gate-Source ESD

(HBM-C=100pF,R=1.5KΩ）

VESD(G-S)

3000

V

Isolation Voltage

VISO

/

2500

V

Junction Temperature Range

Tj

-55～150

℃

Storage Temperature Range

Tstg

-55～150

℃

Maximum Temperature for soldering

TL

300

℃

4.2 Thermal Characteristics

Parameter

Symbol

Rating

Unit

830/I830/E830/

B830/D830

F830

Thermal Resistance,Junction to Case-sink

RthJC

1.67

4.17

℃

/W

Thermal Resistance,Junction to Ambient

RthJA

62.5

℃

/W

1 Description

830, the silicon N-channel enhanced vdmosfets, is obtained

by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and

enhance the avalanche energy. Which accords with the

RoHS standard.

2 Features

● Fast switching

● ESD improved capability

● Low gate charge(Typ: 14.5nC)

● Low reverse transfer capacitances(Typ: 7.5pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system

miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.

VDSS = 500V

RDS(on) (TYP)= 1.25Ω

ID = 5A

TO-220C

TO-220F

TO-262

TO-263

TO-252B TO-251B

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