VBM1102M datasheet(1/9 Pages) VBSEMI

Part #	VBM1102M

Description	N-Channel 100-V (D-S) MOSFET

PDF	9 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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1 / 9 page

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).

c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C.

PRODUCT SUMMARY

VDS (V)

100

RDS(on) ()VGS = 10 V

0.20

Qg (Max.) (nC)

16

Qgs (nC)

4.4

Qgd (nC)

7.7

Configuration

Single

N-Channel MOSFET

G

D

S

Available

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

14

A

TC = 100 °C

8

Pulsed Drain Currenta

IDM

37

Linear Derating Factor

0.40

W/°C

Linear Derating Factor (PCB Mount)

0.025

Single Pulse Avalanche Energyb

EAS

200

mJ

Avalanche Currenta

IAR

9.2

A

Repetitive Avalanche Energya

EAR

6.0

mJ

Maximum Power Dissipation

TC = 25 °C

PD

60

W

Maximum Power Dissipation (PCB Mount)

TA = 25 °C

3.7

Peak Diode Recovery dV/dtc

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

For 10 s

300d

N-Channel 100-V (D-S) MOSFET

1

www.VBsemi.com

VBM1102M

TO-220AB

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GD S

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