SC010NG datasheet(3/4 Pages) DOINGTER

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SC010NG

Continuous Source Current

1.5

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Trr

Body Diode Reverse Recovery Time

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Qrr

Body Diode Reverse Recovery Charge

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2.9

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Notes:

Typical Characteristics：

I SM

Pulsed Source Current2,5

VG=VD=0V , Force Current

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IF=8A ,

dI/dt=100A/µs , TJ=25℃

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

0.5

1.5

2.5

VDS , Drain-to-Source Voltage (V)

VGS=10V

VGS=7V

VGS=5V

VGS=4.5V

VGS=3V

VGS (V)

ID=8A

0.3

0.6

0.9

1.2

VSD , Source-to-Drain Voltage (V)

TJ=150℃

TJ=25℃

2 . 5

7 . 5

QG , T o t a l G a t e C h a r g e ( n C )

ID= 8 A

VDS=15V

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs. G-S Voltage

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

Fig.3 Forward Characteristics of Reverse

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