SC010NG datasheet(1/4 Pages) DOINGTER

Part #	SC010NG

Description	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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SC010NG

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=11A,RDS(ON)<10mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra low R DS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

A=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TA=25℃ )

1

11

A

Drain Current – Continuous (TA=100℃ )

1

7

IDM

Drain Current – Pulsed

2

36

EAS

24.2

mj

IAS

22

A

PD

Power Dissipation (TA=25℃ )

4

1.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

1

25

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

1

85

G

D

S

Single Pulse Avalanche Energy3

Avalanche Current

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SC010NG Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SC010NG Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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