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54HC32 Datasheet(PDF) 3 Page - ON Semiconductor

Part # 54HC32
Description  Quad 2-Input OR Gate
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

54HC32 Datasheet(HTML) 3 Page - ON Semiconductor

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MC74VHC32
VHC Data – Advanced CMOS Logic
DL203 — Rev 1
3
MOTOROLA
DC ELECTRICAL CHARACTERISTICS
Unit
TA = – 40 to 85°C
TA = 25°C
VCC
V
Test Conditions
Parameter
Symbol
Unit
Max
Min
Max
Typ
Min
VCC
V
Test Conditions
Parameter
Symbol
Iin
Maximum Input
Leakage Current
Vin = 5.5V or GND
0 to 5.5
± 0.1
± 1.0
µA
ICC
Maximum Quiescent
Supply Current
Vin = VCC or GND
5.5
2.0
20.0
µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
Sb l
P
T
C
di i
TA = 25°C
TA = – 40 to 85°C
Ui
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max
Unit
tPLH,
tPHL
Maximum Propagation Delay,
A or B to Y
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
5.5
8.0
7.9
11.4
1.0
1.0
9.5
13.0
ns
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
Cin
Maximum Input Capacitance
4
10
10
pF
C
PDi
i
i
C
i
(N
1 )
Typical @ 25
°C, VCC = 5.0V
F
CPD
Power Dissipation Capacitance (Note 1.)
14
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin+ ICC / 4(pergate).CPDisusedtodeterminetheno–load
dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
Sb l
Ch
i i
TA = 25°C
Ui
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
– 0.3
– 0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
Figure 1. Switching Waveforms
Y
A or B
50% VCC
tPLH
tPHL
GND
VCC
50%
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 2. Test Circuit
Figure 3. Input Equivalent Circuit
INPUT



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