TMCS1100A2 datasheet(23/50 Pages) TI1

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IN+

IN±

Hall

Element

Bias

Temperature

Compensation

----------------------

Offset Cancellation

VREF

VOUT

Precision

Amplifier

Output

Amplifier

GND

Reference

Sampling

TMCS1100

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SBOS820A – SEPTEMBER 2019 – REVISED JUNE 2020

Product Folder Links: TMCS1100

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9 Detailed Description

9.1 Overview

The TMCS1100 is a precision Hall-effect current sensor, featuring a 600-V basic isolation working voltage, < 1%

full-scale error across temperature, and an external reference voltage enabling unidirectional or bidirectional

current sensing. Input current flows through a conductor between the isolated input current pins. The conductor

has a 1.8-mΩ resistance at room temperature for low power dissipation and a 20-A RMS continuous current

handling capability up to 105°C ambient temperature on the TMCS1100EVM. The low-ohmic leadframe path

reduces power dissipation compared to alternative current measurement methodologies, and does not require

any external passive components, isolated supplies, or control signals on the high-voltage side. The magnetic

field generated by the input current is sensed by a Hall sensor and amplified by a precision signal chain. The

device can be used for both ac and dc current measurements and has a bandwidth of 80 kHz. There are multiple

fixed-sensitivity device variants for a wide option of linear sensing ranges, and the TMCS1100 can operate with a

low voltage supply from 3 V to 5.5 V. The TMCS1100 is optimized for high accuracy and temperature stability,

with both offset and sensitivity compensated across the entire operating temperature range.

9.2 Functional Block Diagram

9.3 Feature Description

9.3.1 Current Input

Input current to the TMCS1100 passes through the isolated side of the package leadframe through the IN+ and

IN– pins. The current flow through the package generates a magnetic field that is proportional to the input

current, and measured by a galvanically isolated, precision, Hall sensor IC. As a result of the electrostatic

shielding on the Hall sensor die, only the magnetic field generated by the input current is measured, thus limiting

input voltage switching pass-through to the circuitry. This configuration allows for direct measurement of currents

with high-voltage transients without signal distortion on the current-sensor output. The leadframe conductor has a

nominal resistance of 1.8 mΩ at 25°, and has a typical positive temperature coefficient as defined in Electrical

Characteristics.

9.3.2 Input Isolation

The separation between the input conductor and the Hall sensor die due to the TMCS1100 construction provides

inherent galvanic isolation between package pins 1-4 and pins 5-8. Insulation capability is defined according to

certification agency definitions and using industry-standard test methods as defined in the Insulation

Specifications table. Assessment of device lifetime working voltages follow the VDE 0884-11 standard for basic

insulation, requiring time-dependent dielectric breakdown (TDDB) data-projection failure rates of less than 1000

part per million (ppm), and a minimum insulation lifetime of 20 years. The VDE standard also requires an

additional safety margin of 20% for working voltage, and a 30% margin for insulation lifetime, translating into a

minimum required lifetime of 26 years at 509 VRMS for the TMCS1100.

TMCS1100A2 Datasheet(PDF) 23 Page - Texas Instruments

TMCS1100A2 Datasheet(HTML) 23 Page - Texas Instruments

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