TMCS1100A2 datasheet(24/50 Pages) TI1

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TMCS1100

SBOS820A – SEPTEMBER 2019 – REVISED JUNE 2020

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Feature Description (continued)

Figure 35 shows the intrinsic capability of the isolation barrier to withstand high-voltage stress over the lifetime of

the device. Based on the TDDB data, the intrinsic capability of these devices is 424 VRMS with a lifetime of > 100

years. Other factors such as operating environment and pollution degree can further limit the working voltage of

the component in an end system.

Figure 35. Insulation Lifetime

9.3.3 High-Precision Signal Chain

The TMCS1100 uses a precision, low-drift signal chain with proprietary sensor linearization techniques to provide

a highly accurate and stable current measurement across the full temperature range of the device. The device is

fully tested and calibrated at the factory to account for any variations in either silicon or packaging process

variations. The full signal chain provides a fixed sensitivity voltage output that is proportional to the current

through the leadframe of the isolated input.

9.3.3.1 Temperature Stability

The TMCS1100 includes a proprietary temperature compensation technique which results in significantly

improved parametric drift across the full temperature range. This compensation technique accounts for changes

in ambient temperature, self-heating, and package stress. A zero-drift signal chain architecture and Hall sensor

temperature stabilization methods enable stable sensitivity and minimize offset errors across temperature, and

drastically improves system-level performance across the required operating conditions.

Figure 36 shows the offset error across the full device ambient temperature range. Figure 37 shows the typical

sensitivity. There are no other external components introducing errors sources; therefore, the high intrinsic

accuracy and stability over temperature directly translates to system-level performance. As a result of this high

precision, even a system with no calibration can reach < 1% of total error current-sensing capability.

Figure 36. Offset Error Drift Across Temperature

Figure 37. Sensitivity Drift Across Temperature

TMCS1100A2 Datasheet(PDF) 24 Page - Texas Instruments

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