FTA1385D datasheet(1/3 Pages) FS

Part #	FTA1385D

Description	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 3 page

EPITAXIAL PLANAR PNP TRANSISTOR

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

FEATURES



High Power Dissipation : PC =1.3W(Ta=25℃)

MAXIMUM RATING (Ta=25℃)

TO-252(D-PAK)

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

K

L

6.60

0.2

6.10

0.2

5.0

0.2

1.10

0.2

2.70

0.2

2.30

0.1

1.00 MAX

2.30

0.2

0.5

0.1

2.00

0.20

0.50

0.10

E

0.91

0.10

M

0.90

0.1

O

A

C

I

J

H

F

P

L

1

2

3

1. BASE

2. COLLECTOR

3. EMITTER

1.00

0.10

P

0.95 MAX

Q

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

* Pulse test : PW

≤ 350 S, Duty Cycle≤ 2% Pulse

Note) hFE (2) Classification :

O:160 ~320,

Y:200~400.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-7

V

Collector Current

DC

IC

-5

A

Pulse *

ICP

-8

Base Current

IB

-1

A

Collector Power

Dissipation

Ta=25℃

PC

1.3

W

Tc=25℃

15

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 ~ 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-

-10

A

Emitter Cut-off Current

IEBO

VEB=-7V, IC=0

-

-10

A

DC Current Gain *

hFE1

VCE=-1V, IC=-0.1A

60

-

hFE 2 (Note)

VCE=-1V, IC=-2A

160

-

400

hFE3

VCE=-2V, IC=-5A

50

-

Collector-Emitter Saturation Voltage *

VCE(sat)

IC=-2A, IB=-0.2A

-

-0.14

-0.3

V

Base-Emitter Saturation Voltage *

VBE(sat)

IC=-2A, IB=-0.2A

-

-0.9

-1.2

V

Switching

Time

Turn On Time

ton

IB1

B1

I

CC

V

=-10V

IB2

20

µsec

-I

=I

=0.2A

1%

B1

B2

OUTPUT

DUTY CYCLE

INPUT

0

<

=

-

0.15

1

S

Storage Time

tstg

-

0.78

2.5

Fall Time

tf

-

0.18

1

DIM

MILLIMETERS

TO-251(I-PAK)

H

F

C

A

P

L

I

J

12

3

A

B

C

D

E

F

G

H

I

J

L

P

Q

6.60

0.2

6.10

0.2

5.0

0.2

1.10

0.2

9.50

0.6

2.30

0.1

0.76

0.1

1.0 MAX

2.30

0.2

0.5

0.1

0.50

0.1

1.0

0.1

0.90 MAX

G

1. BASE

2. COLLECTOR

3. EMITTER

K

2.0

0.2

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

* PW

≤10ms, Duty Cycle≤50%

℃

SEMICONDUCTOR

NICAL DATA

FTA1385D/I

2018. 12. 26

1/3

Revision No : 0

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