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VN2210 Datasheet(PDF) 1 Page - Microchip Technology |
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VN2210 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2016 Microchip Technology Inc. DS20005559A-page 1 VN2210 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-drain Diode • High Input Impedance and High Gain Applications • Motor Controls •Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) General Description VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type TO-39 TO-92 GATE SOURCE DRAIN GATE SOURCE DRAIN s N-Channel Enhancement-Mode Vertical DMOS FET |
Similar Part No. - VN2210 |
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Similar Description - VN2210 |
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