FTC2655 datasheet(1/2 Pages) FS

Part #	FTC2655

Description	Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A)

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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TO-92L

1. EMITTER

2. COLLECTOR

3. BASE

SEMICONDUCTOR

TECHNICAL DATA

FTC2655

2010. 9. 07

1/2

Revision No : 0

FEATURES

Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A)

High Speed Switching Time: tstg=1

μs(Typ.)

Complementary to FTA1020

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Symbol

Unit

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current –Continuous

2

A

PC

Collector Power Dissipation

0.9

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100

μA,IE

V

0

5

0

=

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB

V

0

5

0

=

Emitter-base breakdown voltage

V(BR)EBO

IE=100

μA,IC

V

5

0

=

Collector cut-off current

ICBO

VCB=50V,IE

1

0

=

μA

Emitter cut-off current

IEBO

VEB=5V,IC

1

0

=

μA

hFE(1)

VCE=2V,IC=500mA

70

240

DC current gain

hFE(2)

VCE=2V,IC

0

4

A

5

.

1

=

Collector-emitter saturation voltage

VCE(sat)

IC=1A,IB

V

5

.

0

A

5

0

.

0

=

Base-emitter saturation voltage

VBE(sat)

IC=1A,IB

V

2

.

1

A

5

0

.

0

=

Transition frequency

fT

VCE=2V,IC

z

H

M

0

1

A

5

.

0

=

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

Tune on Time

ton

5

1

.

0

Storage Time

tstg

1

Switch time

Fall Time

tf

VCC=30V,Ic=1A,

IB1=-IB2=0.05A

0.15

μs

CLASSIFICATION OF hFE(1)

Rank

Y

O

Range

0

4

2

-

0

2

1

0

4

1

-

0

7

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