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FTD1408 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTD1408 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 2012. 02. 27 1/2 SEMICONDUCTOR TECHNICAL DATA FTD1408 Revision No : 0 TO-220F A A B C C D D E E F G H H 1 52 MAX 1 52 MAX J K L M L N N N O Q R R 1 2 3 M DIM MILLIMETERS 10 16 0 20 + _ 15 00 0 20 + _ 3 00 0 20 + _ 0 625±0 125 3 50 typ 0 45 0 1 + _ 3 80 0 2 + _ 13 20 0 20 + _ 2 54 0 2 + _ 4 50 0 2 + _ 6 36 0 3 + _ 2 70 0 20 + _ 2 7 typ 16 80 0 4 + _ 1. Base 2. Collector 3. Emitter FTD1408 TRANSISTOR (NPN) FEATURES Low Frequency Amplifier Medium Speed Switching MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 8 e g a t l o V e s a B - r o t c e ll o C VCEO V 0 8 e g a t l o V r e t t i m E - r o t c e ll o C VEBO V 5 e g a t l o V e s a B - r e t t i m E IC A 4 t n e r r u C r o t c e ll o C PC W 2 n o i t a p i s s i D r e w o P r o t c e ll o C RθJA Thermal Resistance From Junction To Ambient 62.5 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 μA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO * IC=50mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100 μA,IC=0 5 V Collector cut-off current ICBO VCB=80V,IE 0 3 0 = μA Emitter cut-off current IEBO VEB=5V,IC 0 0 1 0 = μA hFE(1) VCE=5V, IC=0.5A 40 240 DC current gain hFE(2) VCE=5V, IC=3A 15 Collector-emitter saturation voltage VCE(sat) IC=3A,IB=0.3A 1.5 V Base-emitter voltage VBE VCE=5V, IC=3A 1.5 V Transition frequency fT VCE=5V,IC=0.5A 8 MHz Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 90 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) Y O R K N A R RANGE 0 4 2 - 0 2 1 0 4 1 - 0 7 0 8 - 0 4 |
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